Figure 2 illustrates a TI GaN FET with an integrated gate driver. GaN’s high-speed switching is changing the way power systems look today, enabling market trends such as ultra-thin power supplies, motor drive integrated robotics and achieving >200% more power density in next-generation datacenters and 5G rectifiers. TI a T C2000 실시간 MCU 인 시스 2 2021 1 파워 일렉트로닉스 업계의 설계자에게는 시스템 성능을 높이기 위한 새 기술과 방법이 필요합니다. TI’s new family of industrial 600-V and 650-V (the latter for automotive) GaN devices integrates a GaN FET, driver, and protection functions at 30 and 50-mΩ power stages to provide a … Find parameters, ordering and quality information Parameters RDS (on) (Milliohm) 70 VDS (Max) (V) 600 ID (Max) (A) 12 Rating Catalog open-in-new Find other Gallium nitride (GaN… Texas Instruments, Inc. (TI) today introduced the industry's first 80-V, 10-A integrated gallium-nitride (GaN) FET power-stage prototype, which consists of a high-frequency driver and two … Offering 23% lower thermal impedance than the nearest competitive packaging, the TI GaN FET packaging allows engineers to use smaller heat sinks while simplifying thermal designs. Browse TI's portfolio of award-winning high-speed gallium nitride (GaN) power devices enabling high power density and design simplicity, available in single and dual-channel low-side as well as high … Figure 2: The integration of a 600-V GaN FET with a gate driver and short-circuit protection In data centers and server farms, TI’s … For decades, TI has been at the forefront of developing new process, packaging and circuit-design technologies to deliver the best power devices for your design. GaN FET gate drivers High-speed GaN gate drivers enabling high power density and design simplicity for every power topology Our drivers’ combination of fast timing specs, leadless packages, and narrow … Using TI’s new automotive GaN FETs can help reduce the size of electric vehicle (EV) onboard chargers and DC/DC converters by as much as 50% compared to existing Si or SiC solutions … GaN transistors can switch much faster than silicon MOSFETs which offers the potential to achieve lower switching losses. Texas Instruments (TI) has launched a 650V Gallium Nitride (GaN) FET with a silicon driver in the same package for industrial designs. 各種電源トポロジで高い電力密度と設計の簡素化を実現する高速 GaN ゲート・ドライバ, TI のドライバは、高速タイミング仕様、リードレス・パッケージ、狭いパルス幅への応答という特性を組み合わせ、 FET の高速スイッチングを実現できます。ゲート電圧のレギュレーション、プログラム可能なデッドタイム、内部消費電力の低減などの機能を追加した結果、高周波スイッチングを通じて可能な範囲で最大の効率を実現できます。, 60MHz、1ns の速度を実現する 5V、7A ローサイド GaN ドライバは、パルス幅の短いアプリケーション向けに構築されています。, 5V、4A/6A、ローサイド GaN ドライバ。パルス幅の短いアプリケーションの製作を今すぐ開始できます。, エンハンスメント・モード GaN FET 向けの 100V、1.2A、5A、ハーフ・ブリッジ・ゲート・ドライバは、電力密度の最大化に貢献します。, 200V、1.5A、3A のハーフ・ブリッジ GaN ドライバは、デッドタイムが調整可能であり、電力密度を保証する目的で構築済みです。, エンハンスメント・モード GaN FET 向けの車載、100V、1.2A / 5A のハーフ・ブリッジ・ゲート・ドライバは、電力密度を意識して製作済みです, 外部 PWM 信号付きの小型で使いやすい出力段。さまざまな DC/DC コンバータ・トポロジの評価を可能にします。, バンドギャップが広い材質を TI の高電圧製品ラインアップと組み合わせた場合に電源で実現できる利点について、概要をご確認ください。, 一度に 1 つのパルスを放射する方法で自動車の安全性を強化することを意図した LiDAR テクノロジーについて説明します。, GaN の潜在能力を最大限に引き出すうえでゲート・ドライバの選定が重要な理由をご確認ください。, TI の E2E™ コミュニティでは、エンジニア間の質疑応答、知識の共有、アイデアの提供、問題の解決をサポートしています。ぜひご活用ください。, USB Type-C と USB power delivery（PD) IC (52), 高速 DC/DC コンバータ用のマルチ MHz の GaN 出力段のリファレンス・デザイン. GaN FETs with integrated driver & protection for power density. 機能、温度レポート機能を内蔵、理想ダ イオード・モードを搭載、600V、30mΩ の GaN FET パラメータ検索, 購入と品質の情報. Check out our featured GaN devices below, designed to help you address power density. Power management is at the center of enabling the continued integration of electronics in our lives. The new LMG3410 from TI features a GaN FET with a breakdown voltage of 80V for a current of 10A (25 C). TI’s LMG3410R070 is a 600-V 70mΩ GaN with integrated driver and protection. Maximize power density and reliability with our portfolio of GaN power devices for every power level. Our family of gallium nitride (GaN)FETs with integrated gate drivers and GaN power devices offer the most efficient GaN solution with lifetime reliability and cost advantages. Find parameters, ordering and quality information Parameters RDS (on) (Milliohm) 15 VDS (Max) (V) 80 ID (Max) (A) 10 Rating Catalog open-in-new Find other Gallium nitride (GaN… Figure 1: The surge rating parameter, V DS(SURGE), is the peak bus FET withstand voltage during operation when a surge strikes.Some GaN data sheets already have an off-state … 4 High Volt Interactive 2017 (27) The following topics were presented at High Volt Interactive … The transistor is The transistor is driven by a National Semiconductors silicon IC Gate driver with 1 … TI GaN-on-silicon process utilizes our 100% internal manufacturing facilities for fabrication, assembly and test, thus leveraging internally-owned capacity and maximized product quality.Â. しかし今回はGaN FETモジュールを採用したため、1段で降圧変換することが可能になった。変換効率が92％と高いためだ。 このようにGaN FETモジュールを使う採用するメリットは非常に大きい。TI … 機能を統合した新GaN FET このように着実にGaNの開発を進めてきたTIは、「次世代の統合GaN FET」と位置付ける650Vおよび600VのGaN FET製品ファミリを開発した。 With devices from 150-mΩ to 30-mΩ, we have a GaN solution for every application.Â, Offline & isolated DC/DC controllers & converters, USB power switches & charging port controllers, Buck-boost & inverting controllers (external switch) (20), Buck-boost & inverting modules (integrated inductor) (5), Buck-boost, inverting & split-rail converters (integrated switch) (53), Buck converters (integrated switch) (877), Boost converters (integrated switch) (186), Digital power control drivers & powertrain modules (8), Offline & isolated DC/DC controllers & converters (585), Power factor correction (PFC) controllers (74), PWM controllers & resonant controllers (390), Synchronous rectifier (SR) controllers (7), USB power switches & charging port controllers (165), Revolutionizing the power engineering world, 98.7%-efficient 1 MHz CrM GaN PFC reference design, 48V/10A 3-phase GaN inverter design for high-speed motor drive, 200V AC three-phase GaN inverter design for servo drive, A fast switching, 2.2-MHz integrated gate driver, Twice the power density to achieve 99% efficiency, A 59% reduction in the size of power magnetics compared to existing solutions. TI Information – Selective Disclosure GaN: Key Advantages Over Silicon FET 5 Low C G,Q G gate capacitance/charge (1 nC-Ω vs Si 4 nC-Ω) faster turn-on and turn-off, higher switching speed reduced … TI announces industry's first automotive GaN FET with integrated driver, protection and active power management SemiMediaEdit November 10, 2020 Posted on MarketWatch TIの GaN FETパッケージは、最も近い競合製品と比較して23パーセント低い熱インピーダンスを提供することから、より小型の放熱器を使用できるほか、放熱設計の簡素化に役立ちます。 … This, combined with our low-inductance package, delivers clean switching and minimal ringing in every power application. From consumer applications such as AC/DC power supplies all the way up to multi-kW, three-phase converters – GaN is reducing the weight, size and cost of these power designs while also reducing energy consumption. TI Introduces Industry’s First Automotive GaN FET With Integrated Driver, Protection And Active Power Management relay November 9, 2020 Texas Instruments (TI) expanded its high-voltage power management portfolio with the next generation of 650-V and 600-V gallium nitride (GaN… TI introduces industry's first automotive GaN FET with integrated driver, protection and active power management Engineers can deliver twice the power density and the highest efficiency in … 年にわたる製造技術や専門知識をベースにGaN FET … Interfacing C2000 MCUs with TI GaN technology A C2000 MCU, digital isolation device and GaN FET are all that are necessary to interface the devices, as shown in Figure 1. 600-V 70-mΩ GaN with integrated driver and protection, 600-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting, 600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting, Featured gallium nitride (GaN) reference designs, This PFC design offers 270W/in^3 power density and 98.7% peak efficiency while switching at 1 MHz. GaN’s integrated driver enables switching speeds of >150 V/ns, resulting in half the losses compared to discrete GaN FETs. 各種電源トポロジで高い電力密度と設計の簡素化を実現する高速 GaN ゲート・ドライバ TI のドライバは、高速タイミング仕様、リードレス・パッケージ、狭いパルス幅への応答という特性を組み合わ … TI’s LMG5200 is a 80V GaN Half Bridge Power Stage. The GaN transistor operates as an ideal diode rather than … Our family of gallium nitride (GaN)FETs with integrated gate drivers and GaN power devices offer the most efficient GaN solution with lifetime reliability and cost advantages. GaN’s inherent lower gate and output capacitance enables a MHz switching frequency operation which reduces gate and switching losses to increase efficiency.Â. GaN transistors can switch … Find parameters, ordering and quality information Parameters RDS (on) (Milliohm) 30 VDS (Max) (V) 650 Rating Automotive open-in-new Find other Gallium nitride (GaN… 3.21 Learn how TI's GaN technology can reduce power losses and free up factory floor space. TI’s LMG3522R030-Q1 is a Automotive 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting. Figure 1: … Our GaN transistors are being adopted for a wide range of applications from telecommunications, servers, motor drives, laptop adapters and on-board chargers for electric vehicles. ョン・プロファイルによる認定済み 高密度の電力変換設計が可能 カスコードまたはスタンドアロンのGaN FETで優 … C2000 실시간 MCU와 GaN FET가 힘을 합쳐 효율성과 전력 밀도 … GaN FET with integrated driver, protection, reporting and power management Fully integrated, 650-V automotive GaN FETs from Texas Instruments aim to deliver the high-efficiency, high-frequency switching benefits of GaN … 600-V 30-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode The 2-stage interleaved 1.6 kW design is ideal for many space constrained applications such as server, telecom and industrial power supplies.Â, This design enables low voltage, 100-kHz drives and low inductance brushless motors to minimize losses, torque ripple in the motor and achieve efficiency of 98.5%.Â, This 98%-efficient design for driving 200-V AC servo motors up to 2 kW, enables low-inductance motor drive with minimum current ripple for fine position controlled applications.Â, TI’s new automotive GaN FETs can help reduce the size of electric vehicle (EV) onboard chargers and DC/DC converters by as much as 50% compared to existing Si or SiC solutions, offering electric vehicles an extended battery range with increased system reliability at a lower design cost.Â, TI's integrated approach to GaN offers ease of design with a compact single-chip solution, high efficiency as a result of optimized gate drive layout and high reliability with integrated overcurrent protection and 40 million hours of device reliability hours. GaN FETs have inherently superior performance over traditional silicon FETs, which is enabling engineers to push the boundary in power designs and reach new levels of power density and efficiency. The …